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2SK1056, 2SK1057, 2SK1058
Silicon N Channel MOS FET
REJ03G0906-0200 (Previous: ADE-208-1244) Rev.2.00 Sep 07, 2005
Application
Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162
Features
* * * * * * * Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D G 1. Gate 2. Source (Flange) 3. Drain
S 1 2 3
Rev.2.00 Sep 07, 2005 page 1 of 5
2SK1056, 2SK1057, 2SK1058
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage 2SK1056 2SK1057 2SK1058 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at TC = 25C VGSS ID IDR 1 Pch* Tch Tstg Symbol VDSX Ratings 120 140 160 15 7 7 100 150 -55 to +150 V A A W Unit V
C C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage 2SK1056 2SK1057 2SK1058 V(BR)GSS VGS(off) VDS(sat) |yfs| Ciss Coss Crss ton toff Symbol V(BR)DSX Min 120 140 160 15 0.15 -- 0.7 -- -- -- -- -- -- -- -- 1.0 600 350 10 180 60 -- 1.45 12 1.4 -- -- -- -- -- V V V S pF pF pF ns ns IG = 100 A, VDS = 0 ID = 100 mA, VDS = 10 V ID = 7 A, VGD = 0 * 2 ID = 3 A, VDS = 10 V * VGS = -5 V, VDS = 10 V, f = 1 MHz VDD = 20 V, ID = 4 A
2
Typ --
Max --
Unit V
Test conditions ID = 10 mA, VGS = -10 V
Gate to source breakdown voltage Gate to source cutoff voltage Drain to source saturation voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Note: 2. Pulse test
Rev.2.00 Sep 07, 2005 page 2 of 5
2SK1056, 2SK1057, 2SK1058
Main Characteristics
Power vs. Temperature Derating
150
20
Maximum Safe Operation Area
Ta = 25C
Channel Dissipation Pch (W)
Drain Current ID (A)
100
50
ID max (Continuous) P PW 5 PW W = = 1 10 0 m = 0s 1 m1 s s sh 1 2 1 ot sh sh ot ot 1.0
10
D
C
pe O
t ra
io
n
(T C
=
25
C
)
0.5
2SK1056
0
50
100
150
0.2 5
2SK1057 2SK1058
500
10
20
50
100 200
Case Temperature TC (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
10 1.0
Typical Transfer Characteristics
Drain Current ID (A)
Drain Current ID (A)
8
0.8
6
7 6 5 4
0.6
4
0.4
Pch =
3
100 W
2 1 0
2
0.2
0
10
20
30
40
50
0
0.4
0.8
1.2
T
C=
-2 5C 25 75
1.6 2.0
VGS = 10 V 9 8
TC = 25C
VDS = 10 V
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs. Drain Current
Drain to Source Voltage vs. Gate to Source Voltage
Drain to Source Saturation Voltage VDS (on) (V)
5
VGD = 0
25
C
75
TC
2 1.0 0.5
=-
25
C
Drain to Source Voltage VDS (V)
10
C
10 8
TC = 25C
6
5A
4
0.2 0.1 0.1
2
2A ID = 1 A
2 4 6 8 10
0.2
0.5 1.0
2
5
10
0
Drain Current ID (A)
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 5
2SK1056, 2SK1057, 2SK1058
Input Capacitance vs. Gate Source Voltage Forward Transfer Admittance vs. Frequency
Forward Transfer Admittance yfs (S)
1000
3.0 1.0 0.3 0.1 0.03 0.01 0.003 10 k TC = 25C VDS = 10 V ID = 2 A
Input Capacitance Ciss (pF)
500
200 VDS = 10 V f = 1 MHz 100 0 -2 -4 -6 -8 -10
30 k 100 k
300 k 1 M
3M
10 M
Gate to Source Voltage VGS (V)
Frequency f (Hz)
Switching Time vs. Drain Current
500
Switching Time ton, toff (ns)
200 100 50
ton
toff 20 10 5 0.1
0.2
0.5
1.0
2
5
10
Drain Current ID (A)
Switching Time Test Circuit
Output R L= 2 Input Input 10 % t on PW = 50 s duty ratio =1% 50 20 V Output
Waveforms
90 %
t off 10 %
90 %
Rev.2.00 Sep 07, 2005 page 4 of 5
2SK1056, 2SK1057, 2SK1058
Package Dimensions
JEITA Package Code
SC-65
RENESAS Code
PRSS0004ZE-A
Package Name TO-3P / TO-3PV
MASS[Typ.] 5.0g
5.0 0.3
Unit: mm
4.8 0.2 1.5
15.6 0.3
0.5
1.0
3.2 0.2
14.9 0.2
19.9 0.2
1.6 1.4 Max 2.0 2.8
2.0
1.0 0.2 3.6 0.9 1.0
18.0 0.5
0.6 0.2
5.45 0.5
5.45 0.5
Ordering Information
Part Name 2SK1056-E 2SK1057-E 2SK1058-E 360 pcs 360 pcs 360 pcs Quantity Box (Tube) Box (Tube) Box (Tube) Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Sep 07, 2005 page 5 of 5
0.3
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
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http://www.renesas.com
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
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